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| VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch (mm) CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 85C -40C to 85C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, page 46) VTP8551 SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 33 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 400 925 140 50 1.8 x 10-13 (Typ.) 1.5 x 10 12 (Typ.) .05 .55 1150 .15 50 50 Typ. 70 .20 350 -2.0 30 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees W Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 63 |
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